Search results for "Semiconductor detectors"
showing 10 items of 12 documents
A Portable Readout System for Microstrip Silicon Sensors (ALIBAVA)
2009
A readout system for microstrip silicon sensors has been developed. This system is able to measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256. The system can operate either with non-irradiated and irradiated sensors as well as with n-type and p-type microstrip silicon sensors. Heavily irradiated sensors will be used at the Super Large Hadron Collider, so this system can be used to research the performance of microstrip silicon sensors in conditions as similar as possible to the Super Large Hadron Collider operating conditions. The system has two main parts: a hardware part and a software part. The hardware part a…
The next generation nuclear instruments: AGATA and NEDA, and nuclear structure studies near N=Z line
2017
The first part of this thesis is devoted to the development of a large array of neutron detectors NEDA (NEutron Detector Array) and their conceptual design using Monte-Carlo simulations. Prior to the development of NEDA, the neutron detection with liquid scintillators is discussed in Chapter 2. In Chapter 3, the design criteria and simulations of NEDA are discussed. NEDA aims to build a neutron detector array with high efficiency, based on liquid scintillators. NEDA will be coupled to the high-purity γ-ray detector arrays, like AGATA, EXOGAM, to be used as a trigger or complementary detector in the contemporary nuclear physics experiments, which aim to investigate the structure of the exoti…
Charge Sharing and Cross Talk Effects in High-Z and Wide-Bandgap Compound Semiconductor Pixel Detectors
2023
Intense research activities have been made in the development of high-Z and wide-bandgap compound semiconductor pixel detectors for the next generation X-ray and gamma ray spectroscopic imagers. Cadmium telluride (CdTe) and cadmium-zinc-telluride (CdZnTe or CZT) pixel detectors have shown impressive performance in X-ray and gamma ray detection from energies of few keV up to 1 MeV. Charge sharing and cross-talk phenomena represent the typical drawbacks in sub-millimeter pixel detectors, with severe distortions in both energy and spatial resolution. In this chapter, we review the effects of these phenomena on the response of CZT/CdTe pixel detectors, with particular emphasis on the current st…
CdTe Detectors
2014
Cadmium telluride (CdTe) compound semiconductors for x-ray detectors have experienced a rather rapid development in the last few years, due to their appealing performance. In this chapter we review the physical properties of semiconductor detectors for x-ray and γ ray spectroscopy. In particular, we focus on compound semiconductor detectors. We also review the principles of operation of both the semiconductor detectors and the electronic chains, with special emphasis on the digital techniques. CdTe detectors’ characteristics and performance enhancements are discussed in depth. Finally, we present some original results on CdTe detectors for medical applications.
Digital pulse processing techniques for X-ray and gamma ray semiconductor detectors
2012
Digital pulse processing (DPP) systems, based on direct digitizing and processing of detector signals, have recently been favoured over analog electronics, ensuring higher flexibility, stability and lower dead time. We present our research activities on the development of X-ray and gamma ray spectrometers based on semiconductor detectors and DPP systems. We developed off-line and real-time DPP systems able to perform precise height and shape analysis of detector pulses. X-ray and gamma ray spectra measurements with cadmium telluride (CdTe) and germanium (Ge) detectors highlight the excellent performance of the systems both at low and high rate environments (up to 800 kcps).
The "Livio Scarsi" X-Ray Facility at University of Palermo for Device Testing
2015
In this work, we report on the characteristics of the Livio Scarsi X-ray facility at University of Palermo. The facility is able to produce low energy X rays, within the energy range of 0.1-60 keV, with fluence rates ranging from 105-108 photons/mm2 s. The laboratory is equipped with an innovative digital detection system, based on semiconductor detectors (Si and CdTe detectors), able to provide accurate and precise estimation of the fluence rate, the energy and the exposure of X rays, even at high counting rate conditions. Instrumentation for electrical characterization (DC-AC) of semiconductor devices, for both off-line and on-line (i.e. during the irradiation) measurements, is also avail…
Performance of a new real time digital pulse processing system for X-ray and gamma ray semiconductor detectors
2014
New generation spectroscopy systems have advanced towards digital pulse processing (DPP) approaches. DPP systems, based on direct digitizing and processing of detector signals, have recently been favoured over analog pulse processing electronics, ensuring better performance. In this work, we present the performance of a new real time DPP system for X-ray and gamma ray semiconductor detectors. The system is based on a commercial digitizer equipped with a custom DPP firmware, developed by our group, for on-line pulse shape and height analysis. X-ray and gamma ray spectra measurements with cadmium telluride (CdTe) and germanium (Ge) detectors, coupled to resistive feedback preamplifiers, will …
MALTA: a CMOS pixel sensor with asynchronous readout for the ATLAS High-Luminosity upgrade
2018
Radiation hard silicon sensors are required for the upgrade of the ATLAS tracking detector for the High- Luminosity Large Hadron Collider (HL-LHC) at CERN. A process modification in a standard 0.18 μm CMOS imaging technology combines small, low-capacitance electrodes (∼2 fF for the sensor) with a fully depleted active sensor volume. This results in a radiation hardness promising to meet the requirements of the ATLAS ITk outer pixel layers (1.5 × 1015 neq /cm2 ), and allows to achieve a high signal-to-noise ratio and fast signal response, as required by the HL-LHC 25 ns bunch crossing structure. The radiation hardness of the charge collection to Non-Ionizing Energy Loss (NIEL) has been previ…
High-Resolution 3-D CZT Drift Strip Detectors for Prompt Gamma Ray and Neutron Detection in BNCT
2021
Spectroscopic imagers based on high-Z and wide-bandgap compound semiconductor detectors are widely proposed for the detection of prompt gamma rays in boron neutron capture therapy (BNCT). BNCT is a therapy based on the neutron capture reaction 10B (n,α)7Li. To perform a real-time monitoring of the spatial distribution of 10B during the treatments, the detection of the prompt gamma rays (478 keV), produced by the 7Li recoil nuclei, can be helpful. In this work, we presented the potentialities of new high-resolution CZT drift strip detectors, recently developed by our group, for BNCT measurements. The detectors, exploiting the analysis of the collected-induced charge pulses from anodes, catho…
Radiation-hard semiconductor detectors for SuperLHC
2005
An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10^35 cm^(- 2) s(- 1) has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016 cm 2. The CERN-RD50 project ''Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders'' has been established in 2002 to explore…